Electric Double Layer Gate Field-Effect Transistors Based on Si
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2010
ISSN: 0021-4922,1347-4065
DOI: 10.1143/jjap.49.04dk06